Optical constants of In0.53Ga0.47As/InP: Experiment and modeling
Identifieur interne : 00DC77 ( Main/Repository ); précédent : 00DC76; suivant : 00DC78Optical constants of In0.53Ga0.47As/InP: Experiment and modeling
Auteurs : RBID : Pascal:02-0539396Descripteurs français
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- 7820C, 8105E, 7866F, 7145G, 7722C, 7120N, 7320A, 7135, 7320M, 7118, 7115, 7170E, Etude expérimentale, Indium composé, Gallium arséniure, Semiconducteur III-V, Hétérojonction semiconducteur, Fonction diélectrique, Constante optique, Bande interdite, Ellipsométrie, Analyse Kramers Kronig, Exciton, Masse effective, Calcul k.p, Calcul ab initio, Interaction spin orbite.
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Abstract
The optical constants (E)=1(E)+i2(E) of unintentionally doped In0.53Ga0.47As lattice matched to InP have been measured at 300 K using spectral ellipsometry in the range of 0.4 to 5.1 eV. The (E) spectra displayed distinct structures associated with critical points at E0 (direct gap), spin-orbit split E0+Δ0 component, spin-orbit split E1, E1+Δ1, E0′ feature, as well as E2. The experimental data over the entire measured spectral range (after oxide removal) has been fit using the Holden model dielectric function [Holden , Phys. Rev. B 56, 4037 (1997)], plus a Kramers-Kronig consistent correction, described in this work, that improves the fitting at low energies. This extended model is based on the electronic energy-band structure near these critical points plus excitonic and band-to-band Coulomb-enhancement effects at E0, E0+Δ0, and the E1, E1+Δ1, doublet. In addition to evaluating the energies of these various band-to-band critical points, information about the binding energy (R1) of the two-dimensional exciton related to the E1, E1+Δ1 critical points was obtained. The value of R1 was in good agreement with effective mass/kp theory. The ability to evaluate R1 has important ramifications for first-principles band-structure calculations that include exciton effects at E0, E1, and E2 [M. Rohlfing and S. G. Louie, Phys. Rev. Lett. 81, 2312 (1998); S. Albrecht , Phys. Rev. Lett. 80, 4510 (1998)]. © 2002 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optical constants of In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP: Experiment and modeling</title><author><name sortKey="Munoz, Martin" uniqKey="Munoz M">Martin Munoz</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>New York Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, New York 11210</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>New York Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Minnesota</region></placeName><wicri:cityArea>Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="05"><s1>IBM T. J. Watson Research Center, Route 134/P.O. Box 218, Yorktown Heights, New York 10598</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>IBM T. J. Watson Research Center, Route 134/P.O. Box 218, Yorktown Heights</wicri:cityArea></affiliation></author><author><name sortKey="Holden, Todd M" uniqKey="Holden T">Todd M. Holden</name></author><author><name sortKey="Pollak, Fred H" uniqKey="Pollak F">Fred H. Pollak</name></author><author><name sortKey="Kahn, Mathias" uniqKey="Kahn M">Mathias Kahn</name></author><author><name sortKey="Ritter, Dan" uniqKey="Ritter D">Dan Ritter</name></author><author><name sortKey="Kronik, Leeor" uniqKey="Kronik L">Leeor Kronik</name><affiliation><inist:fA14 i1="01"><s1>Department of Physics</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><wicri:noCountry code="no comma">Department of Physics</wicri:noCountry></affiliation></author><author><name sortKey="Cohen, Guy M" uniqKey="Cohen G">Guy M. Cohen</name><affiliation><inist:fA14 i1="01"><s1>Department of Physics</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><wicri:noCountry code="no comma">Department of Physics</wicri:noCountry></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0539396</idno><date when="2002-11-15">2002-11-15</date><idno type="stanalyst">PASCAL 02-0539396 AIP</idno><idno type="RBID">Pascal:02-0539396</idno><idno type="wicri:Area/Main/Corpus">00E497</idno><idno type="wicri:Area/Main/Repository">00DC77</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ab initio calculations</term><term>Dielectric function</term><term>Effective mass</term><term>Ellipsometry</term><term>Energy gap</term><term>Excitons</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Kramers Kronig analysis</term><term>Optical constants</term><term>Semiconductor heterojunctions</term><term>Spin-orbit interactions</term><term>k.p calculations</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7820C</term><term>8105E</term><term>7866F</term><term>7145G</term><term>7722C</term><term>7120N</term><term>7320A</term><term>7135</term><term>7320M</term><term>7118</term><term>7115</term><term>7170E</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Hétérojonction semiconducteur</term><term>Fonction diélectrique</term><term>Constante optique</term><term>Bande interdite</term><term>Ellipsométrie</term><term>Analyse Kramers Kronig</term><term>Exciton</term><term>Masse effective</term><term>Calcul k.p</term><term>Calcul ab initio</term><term>Interaction spin orbite</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The optical constants (E)=<sub>1</sub>(E)+i<sub>2</sub>(E) of unintentionally doped In<sub>0.53</sub>Ga<sub>0.47</sub>As lattice matched to InP have been measured at 300 K using spectral ellipsometry in the range of 0.4 to 5.1 eV. The (E) spectra displayed distinct structures associated with critical points at E<sub>0</sub> (direct gap), spin-orbit split E<sub>0</sub>+Δ<sub>0</sub> component, spin-orbit split E<sub>1</sub>, E<sub>1</sub>+Δ<sub>1</sub>, E<sub>0</sub><sup>′</sup> feature, as well as E<sub>2</sub>. The experimental data over the entire measured spectral range (after oxide removal) has been fit using the Holden model dielectric function [Holden , Phys. Rev. B 56, 4037 (1997)], plus a Kramers-Kronig consistent correction, described in this work, that improves the fitting at low energies. This extended model is based on the electronic energy-band structure near these critical points plus excitonic and band-to-band Coulomb-enhancement effects at E<sub>0</sub>, E<sub>0</sub>+Δ<sub>0</sub>, and the E<sub>1</sub>, E<sub>1</sub>+Δ<sub>1</sub>, doublet. In addition to evaluating the energies of these various band-to-band critical points, information about the binding energy (R<sub>1</sub>) of the two-dimensional exciton related to the E<sub>1</sub>, E<sub>1</sub>+Δ<sub>1</sub> critical points was obtained. The value of R<sub>1</sub> was in good agreement with effective mass/kp theory. The ability to evaluate R<sub>1</sub> has important ramifications for first-principles band-structure calculations that include exciton effects at E<sub>0</sub>, E<sub>1</sub>, and E<sub>2</sub> [M. Rohlfing and S. G. Louie, Phys. Rev. Lett. 81, 2312 (1998); S. Albrecht , Phys. Rev. Lett. 80, 4510 (1998)]. © 2002 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>92</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optical constants of In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP: Experiment and modeling</s1></fA08><fA11 i1="01" i2="1"><s1>MUNOZ (Martin)</s1></fA11><fA11 i1="02" i2="1"><s1>HOLDEN (Todd M.)</s1></fA11><fA11 i1="03" i2="1"><s1>POLLAK (Fred H.)</s1></fA11><fA11 i1="04" i2="1"><s1>KAHN (Mathias)</s1></fA11><fA11 i1="05" i2="1"><s1>RITTER (Dan)</s1></fA11><fA11 i1="06" i2="1"><s1>KRONIK (Leeor)</s1></fA11><fA11 i1="07" i2="1"><s1>COHEN (Guy M.)</s1></fA11><fA14 i1="01"><s1>Department of Physics</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>New York Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, New York 11210</s1></fA14><fA14 i1="03"><s1>Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455</s1></fA14><fA14 i1="05"><s1>IBM T. J. Watson Research Center, Route 134/P.O. Box 218, Yorktown Heights, New York 10598</s1></fA14><fA20><s1>5878-5885</s1></fA20><fA21><s1>2002-11-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0539396</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The optical constants (E)=<sub>1</sub>(E)+i<sub>2</sub>(E) of unintentionally doped In<sub>0.53</sub>Ga<sub>0.47</sub>As lattice matched to InP have been measured at 300 K using spectral ellipsometry in the range of 0.4 to 5.1 eV. The (E) spectra displayed distinct structures associated with critical points at E<sub>0</sub> (direct gap), spin-orbit split E<sub>0</sub>+Δ<sub>0</sub> component, spin-orbit split E<sub>1</sub>, E<sub>1</sub>+Δ<sub>1</sub>, E<sub>0</sub><sup>′</sup> feature, as well as E<sub>2</sub>. The experimental data over the entire measured spectral range (after oxide removal) has been fit using the Holden model dielectric function [Holden , Phys. Rev. B 56, 4037 (1997)], plus a Kramers-Kronig consistent correction, described in this work, that improves the fitting at low energies. This extended model is based on the electronic energy-band structure near these critical points plus excitonic and band-to-band Coulomb-enhancement effects at E<sub>0</sub>, E<sub>0</sub>+Δ<sub>0</sub>, and the E<sub>1</sub>, E<sub>1</sub>+Δ<sub>1</sub>, doublet. In addition to evaluating the energies of these various band-to-band critical points, information about the binding energy (R<sub>1</sub>) of the two-dimensional exciton related to the E<sub>1</sub>, E<sub>1</sub>+Δ<sub>1</sub> critical points was obtained. The value of R<sub>1</sub> was in good agreement with effective mass/kp theory. The ability to evaluate R<sub>1</sub> has important ramifications for first-principles band-structure calculations that include exciton effects at E<sub>0</sub>, E<sub>1</sub>, and E<sub>2</sub> [M. Rohlfing and S. G. Louie, Phys. Rev. Lett. 81, 2312 (1998); S. Albrecht , Phys. Rev. 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